Title :
Prevention of boron penetration from p+ poly gate by RTN produced thin gate oxide
Author :
Morimoto, Takuya ; Momose, H.S. ; Yamabe, K. ; Iwai, H.
Author_Institution :
ULSI Research Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Abstract :
The effect of a nitrided oxide gate film produced by RTN on the boron penetration from a p+ poly gate electrode was studied. It was found that the RTN oxide gate is very effective for the suppression of boron penetration, even when the nitrogen concentration is as low as a few percent.
Keywords :
Boron; Capacitance measurement; Hydrogen; MOSFETs; Nitrogen; Thermal factors; Thermal resistance; Thickness measurement; Transconductance; Ultra large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
