Current-voltage characteristics of electron irradiated polycrystalline Au/CdSe/Au thin layers

Author

Pavelescu, E.-M. ; Antohe, S. ; Ruxandra, V. ; Spânulescu, S. ; Cimpoca, V. ; Pessa, M.

Volume

2

fYear

2001

fDate

37165

Firstpage

319

Abstract

Polycrystalline thin CdSe layers, obtained by thermal-vacuum deposition on glass substrate at temperature of 220°C, were subjected to two consecutive sessions of irradiation with 7 MeV electrons to fluences of 2 × 10¹⁵ and 4 × 10¹⁵ electrons/cm², respectively. After irradiation, the electrical properties of polycrystalline thin CdSe films, sandwiched between two gold electrodes, were investigated by current voltage measurements. Under low-voltages, Ohm´s law is followed with an electron mobility μ of 52 cm²V^-1 s^-1 and a room temperature electrical conductivity σ ₀ of 4,627 × 10^-5 Ω^-1 cm ^-1. At high-applied voltages, there is a space-charge limited conductivity (SCLC) controlled by an uniform trap distribution with density per unit energy range ρ(E) of 2.39 × 10¹⁴ cm^-3 eV^-1

Keywords

II-VI semiconductors; cadmium compounds; electron beam effects; electron mobility; electron traps; gold; hole traps; metal-semiconductor-metal structures; space-charge-limited conduction; vacuum deposited coatings; 220 degC; 7 MeV; Au-CdSe-Au; Ohm´s law; current-voltage characteristics; electrical properties; electron irradiated polycrystalline Au/CdSe/Au thin layers; electron mobility; glass substrate; gold electrodes; high-applied voltages; low-voltages; room temperature electrical conductivity; space-charge limited conductivity; thermal-vacuum deposition; uniform trap distribution; Conductivity; Current-voltage characteristics; Electrodes; Electrons; Glass; Gold; Optical films; Optical filters; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967474

Filename

967474