Very large transverse magnetoresistance effect in glass-coated bismuth wires with micron and submicron diameters

Author

Grozav, Anatol D.

Author_Institution

Lab. of Semimetal Phys., Inst. of Appl. Phys., Chisinau, Moldova

Volume

2

fYear

2001

fDate

37165

Firstpage

323

Abstract

It was shown that the glass-coated melt spinning method allows fabrication of the thin Bi wires with very large values of transverse magnetoresistance (MR) at 300, 77 and 4.2 K. These single-crystalline wires exhibit MR which is anisotropic and sensitive to the surface scattering even at room temperature. The Bi microwires can be potentially used for fabrication of sensitive magnetoresistive elements because they have not only a large MR value, but also a high element zero-field resistance

Keywords

bismuth; magnetoresistance; melt spinning; nanostructured materials; surface scattering; 300 K; 4.2 K; 77 K; Bi; Bi microwires; fabrication; glass-coated bismuth wires; high element zero-field resistance; melt spinning method; micron diameters; room temperature; sensitive magnetoresistive elements; single-crystalline wires; submicron diameters; surface scattering; very large transverse magnetoresistance effect; Anisotropic magnetoresistance; Bismuth; Fabrication; Laboratories; Magnetic field measurement; Magnetic films; Physics; Spinning; Temperature sensors; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967475

Filename

967475