DocumentCode :
1933671
Title :
Very large transverse magnetoresistance effect in glass-coated bismuth wires with micron and submicron diameters
Author :
Grozav, Anatol D.
Author_Institution :
Lab. of Semimetal Phys., Inst. of Appl. Phys., Chisinau, Moldova
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
323
Abstract :
It was shown that the glass-coated melt spinning method allows fabrication of the thin Bi wires with very large values of transverse magnetoresistance (MR) at 300, 77 and 4.2 K. These single-crystalline wires exhibit MR which is anisotropic and sensitive to the surface scattering even at room temperature. The Bi microwires can be potentially used for fabrication of sensitive magnetoresistive elements because they have not only a large MR value, but also a high element zero-field resistance
Keywords :
bismuth; magnetoresistance; melt spinning; nanostructured materials; surface scattering; 300 K; 4.2 K; 77 K; Bi; Bi microwires; fabrication; glass-coated bismuth wires; high element zero-field resistance; melt spinning method; micron diameters; room temperature; sensitive magnetoresistive elements; single-crystalline wires; submicron diameters; surface scattering; very large transverse magnetoresistance effect; Anisotropic magnetoresistance; Bismuth; Fabrication; Laboratories; Magnetic field measurement; Magnetic films; Physics; Spinning; Temperature sensors; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967475
Filename :
967475
Link To Document :
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