• DocumentCode
    1933677
  • Title

    A permeable base transistor on Si(100) with implanted COSi2-gate

  • Author

    Schuppen, A. ; Mantl, S ; Vescan, L. ; Lüth, H.

  • Author_Institution
    Institut fÿr Schicht- und Ionentechnik (ISI), Forschungszentrum Jÿlich, P.O. Box 1913, D-5170 Jÿlich, FRG
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    A permeable base transistor (PBT) has been fabricated by local implantation of 59Co into Si(100) with subsequent rapid thermal annealing and epitaxial growth of silicon by LPVPE. Transmission electron microscopy shows abrupt interfaces between the buried CoSi2 and the adjacent silicon. Rutherford backscattering and channeling experiments with a minimum yield of 5.3% for the Co signal as well as a specific resistance of 13 ¿ohmcm of the CoSi2 layers demonstrate the good quality of the Si/CoSi2/Si heterostructure. Si/CoSi2 Schottky diodes revealed ideality factors of 1.01, while PBTs with 1.5 ¿m gratings exhibited a maximum transconductance of 11mS/mm.
  • Keywords
    Dry etching; Epitaxial growth; Fabrication; Gratings; Lithography; Metallization; Molecular beam epitaxial growth; Rapid thermal annealing; Silicon; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933677