DocumentCode
1933688
Title
Effects of the passivation process on the electrical characteristics of GaInAs planar photodiodes
Author
Ducroquet, F. ; Guillot, G. ; Renaud, J.C. ; Nouailhat, A.
Author_Institution
Laboratoire de Physique de la Mati?re, INSA-Lyon, 69621 Villeurbanne cedex (France)
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
125
Lastpage
128
Abstract
The electrical properties of GaInAs PIN photodiodes passivated by a silicon nitride film have been compared for different deposition techniques: CVD, PECVD, UVCVD. Passivation induced defects have been observed by admittance spectroscopy and DLTS measurements. The nature, density and profile of these defects are found to be strongly dependent on the deposition process. The latter also largely influences the dark current and its temporal stability.
Keywords
Admittance; Chemical vapor deposition; Dark current; Electric variables; PIN photodiodes; Passivation; Semiconductor films; Silicon; Stability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436408
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