Title :
AES study of thermally treated GeO2/(111)GaAs structures
Author :
Jishiashvili, D. ; Gobsch, G. ; Ecke, G. ; Shiolashvili, Z. ; Gobronidze, V. ; Nakhutsrishvili, I.
Author_Institution :
Georgian Tech. Univ., Tbilisi, Georgia
Abstract :
Auger electron spectroscopy (AES) was used to study the solid phase surface reactions and Ge diffusion process during the thermal treatment (500-750°C) of GeO2/(111)GaAs structures. Different results were obtained for the A and B surfaces of (111)GaAs. The diffusivity data for A and B surfaces could be described by the following Arrhenius expressions: A-D(cm2 s-1)=1.16×102 exp(-3.54/kT); B-D(cm2 s-1)=2.16×10-5 exp(-2.12/kT)
Keywords :
Auger electron spectra; III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; germanium compounds; semiconductor-insulator boundaries; surface diffusion; (111) GaAs A surfaces; (111) GaAs B surfaces; AES profiles; AES study; Arrhenius expressions; Auger electron spectroscopy; GaAs; Ge diffusion process; GeO2-GaAs; GeO2/(111)GaAs structures; diffusion coefficients; interface composition; solid phase surface reactions; thermal treatment; vacuum annealing; Conductivity; Diffusion processes; Electrons; Gallium arsenide; Rapid thermal annealing; Solids; Spectroscopy; Surface resistance; Surface treatment; Temperature;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967476
