• DocumentCode
    1933721
  • Title

    Gate technologies for AlInAs/InGaAs HEMTs

  • Author

    Hunt, T.D. ; Urquhart, J. ; Thompson, J. ; Davies, R.A. ; Wallis, R.H.

  • Author_Institution
    Plessey Research Caswell Ltd., Caswell, Towcester Northants. NN12 8EQ, U.K.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    The properties of Ti and Pt Schottky barriers on AlInAs have been investigated to assess their suitability as gate metals for AlInAs/InGaAs HEMTs. Pt was found to give a slightly higher Schottky barrier than Ti and, more significantly, gave a reverse leakage current about two orders of magnitude lower than Ti at typical gate biases. AlInAs/InGaAs HEMTs using PtAu gates have been fabricated, and a peak d.c. transconductance of 400 mS/mm achieved. Devices with 0.7¿m gate lengths gave extrapolated values of fT up to 52 GHz.
  • Keywords
    Density measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs; Metallization; Schottky barriers; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933721