Title :
Gate technologies for AlInAs/InGaAs HEMTs
Author :
Hunt, T.D. ; Urquhart, J. ; Thompson, J. ; Davies, R.A. ; Wallis, R.H.
Author_Institution :
Plessey Research Caswell Ltd., Caswell, Towcester Northants. NN12 8EQ, U.K.
Abstract :
The properties of Ti and Pt Schottky barriers on AlInAs have been investigated to assess their suitability as gate metals for AlInAs/InGaAs HEMTs. Pt was found to give a slightly higher Schottky barrier than Ti and, more significantly, gave a reverse leakage current about two orders of magnitude lower than Ti at typical gate biases. AlInAs/InGaAs HEMTs using PtAu gates have been fabricated, and a peak d.c. transconductance of 400 mS/mm achieved. Devices with 0.7¿m gate lengths gave extrapolated values of fT up to 52 GHz.
Keywords :
Density measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs; Metallization; Schottky barriers; Schottky diodes;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
