DocumentCode
1933753
Title
A fully integrated LNA for COMPASS receiver in SiGe-BiCMOS technology
Author
Jin Li ; Wenyuan Li
Author_Institution
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
fYear
2012
fDate
18-20 Sept. 2012
Firstpage
1
Lastpage
4
Abstract
A novel low-noise amplifier (LNA) designed for COMPASS receiver is proposed in this paper. Inductively degenerated technique and resistive feedback technique are utilized to decrease the noise figure. It not only lowers the noise figure, but also decreases the area of the chip. SiGe-BiCMOS process is used to design this LNA. With a supply voltage of 1.8V, the proposed LNA achieves an NF of 1.17 dB with good S parameters.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; feedback; low noise amplifiers; radio receivers; semiconductor materials; BiCMOS technology; COMPASS receiver; S-parameters; SiGe; inductively degenerated technique; integrated LNA; low-noise amplifier; noise figure; noise figure 1.17 dB; resistive feedback technique; voltage 1.8 V; Impedance; Impedance matching; Noise; Noise figure; Radio frequency; Transistors; LNA; SiGe-BiCMOS; inductively degenerated; resistive feedback;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location
Nanjing
Print_ISBN
978-1-4673-0901-1
Electronic_ISBN
978-1-4673-0903-5
Type
conf
DOI
10.1109/IMWS2.2012.6338189
Filename
6338189
Link To Document