Title :
A parametric investigation of the reactive ion etching of InP in CH4/H2 plasmas using response surface methodology
Author :
Thomas, D J ; Clements, S J
Author_Institution :
STC Technology Ltd, London Road, Harlow, Essex, CM17 9NA
Abstract :
Response surface methodology (RSM) is applied to study the reactive ion etching (RIE) of InP in CH4/H2 plasmas. Mechanistic information is inferred through careful interpretation of the contour plots derived from RSM. The data enable the process conditions required for specific device applications to be successfully selected.
Keywords :
Etching; Indium phosphide; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Polymers; Power measurement; Response surface methodology; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
