Title :
SiC power Schottky diodes: industrial development
Author :
Badila, Marian ; Brezeanu, Gheorghe ; Banu, Viorel ; Godignon, Philippe ; Millan, Jose ; Jorda, Xavier ; Draghici, Florin
Author_Institution :
IMT, Bucharest, Romania
Abstract :
The paper describes the results obtained in a trial of the industrial fabrication of silicon carbide power Schottky diodes. The structure technology uses the simple ramp oxide edge termination to minimize field crowding at the edge of the metal contact and high temperature metal annealing to reduce the specific metal-semiconductor resistance. By optimising the Schottky barrier the best diode results obtained for a 1016 cm-3, 3 μm thickness 4H n-SiC epilayer are: 3.7 V forward voltage drop at 1000 A/cm2, and a 35 μA/cm2 at an 100 V reverse voltage while the maximum breakdown voltage was around of 300 V
Keywords :
Schottky diodes; annealing; contact resistance; power semiconductor diodes; semiconductor device breakdown; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 100 V; 3 micron; 300 V; 4H n-SiC epilayer; Schottky barrier; SiC; SiC power Schottky diodes; field crowding; forward voltage drop; high temperature metal annealing; industrial development; industrial fabrication; maximum breakdown voltage; ramp oxide edge termination; reverse voltage; specific metal-semiconductor resistance; structure technology; Annealing; Breakdown voltage; Contact resistance; Electrical resistance measurement; Fabrication; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Textile industry;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967478
