Title :
High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP
Author :
Gueissaz, F. ; Houdré, R. ; Ilegems, M.
Author_Institution :
Institut de Micro- et Optoélectronique. Ecole Polytechnique Fédérale., CH 1015 Lausanne, Switzerland.
Abstract :
Results of Two-dimensional Electron Gas Field Effect Transistors (TEGFETs) processed on InGaAs/InAIAs modulation doped heterostructures grown by Molecular Beam Epitaxy (MBE) are presented. We obtain extrinsic transconductances of 424mS/mm for 1×50¿m2 depletion mode TEGFETs. A detailed static characterization of the devices and energy band profile calculation reveal that a more efficient channel modulation at high current densities can be achieved.
Keywords :
Current density; Electron beams; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
