• DocumentCode
    1933772
  • Title

    High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP

  • Author

    Gueissaz, F. ; Houdré, R. ; Ilegems, M.

  • Author_Institution
    Institut de Micro- et Optoélectronique. Ecole Polytechnique Fédérale., CH 1015 Lausanne, Switzerland.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    Results of Two-dimensional Electron Gas Field Effect Transistors (TEGFETs) processed on InGaAs/InAIAs modulation doped heterostructures grown by Molecular Beam Epitaxy (MBE) are presented. We obtain extrinsic transconductances of 424mS/mm for 1×50¿m2 depletion mode TEGFETs. A detailed static characterization of the devices and energy band profile calculation reveal that a more efficient channel modulation at high current densities can be achieved.
  • Keywords
    Current density; Electron beams; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933772