Title :
Surface characteristics of plasma treated WNx/GaAs contacts from C-V measurements
Author :
Bagnoli, P.E. ; Paccagnella, A. ; Callegari, A. ; Fantini, F.
Author_Institution :
Istituto di Elettronica e Telecomunicazioni, University of Pisa, Pisa, Italy
Abstract :
The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX / GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal / semiconductor contact.
Keywords :
Capacitance-voltage characteristics; Density measurement; Gallium arsenide; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Surface cleaning; Surface treatment;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
