Title :
Submicron pseudomorphic Al0.2 Ga0.8As/In0.25Ga0.75 As-HFET made by conventional optical lithography for microwave circuit applications above 100GHz
Author :
Meschede, H. ; Kraus, J. ; Bertenburg, R. ; Brockerhoff, W. ; Prost, W. ; Heime, K. ; Nickel, H. ; Schlapp, W. ; Losch, R.
Author_Institution :
Universitÿt -GH- Duisburg, Halbleitertechnik/Halbleitertechnologie, SFB 254, Kommandantenstr. 60, D-4100 Duisburg 1
Abstract :
In this work the device performance of a submicrometer pseudomorphic FET made by conventional optical lithography using a single-layer photoresist will be presented. With this technique a gate-length of 0.6¿m can be reproducible achieved. Using a multiple finger structure with air-bridge technology a maximum taransconductance of 47OmS/mm and a cutoff-frequency of 111GHz was obtained.
Keywords :
FETs; Fingers; Gold; Lithography; Metallization; Microwave circuits; Nickel; Optical devices; Positron emission tomography; Resists;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
