DocumentCode
1933855
Title
Direct observation of the mask edge effect in a boron implantation
Author
Gong, L. ; Lorenz, J. ; Ryssel, H.
Author_Institution
Fraunhofer Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestr. 12, D-8520 Erlangen, West-Germany
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
93
Lastpage
96
Abstract
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated qualitatively with a Monte Carlo simulation program.
Keywords
Area measurement; Boron; Electrical capacitance tomography; Energy measurement; Etching; Ion implantation; Particle scattering; Silicon; Thickness control; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436416
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