DocumentCode
1933926
Title
New aspects of intrinsic gettering for CCD imagers
Author
Sobolev, N.A. ; Shapiro, I Yu ; Sokolov, V I ; Vasilyeva, E D
Author_Institution
A F Ioffe Physico-Technical Institute Academy of Sciences of the USSR, Leningrad, USSR
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
89
Lastpage
92
Abstract
The influence of as-grown microdefects on the CCD-Imager parameters is observed. It´s shown that the defect structure of the initial silicon wafers defines directly both denuded zone/gettering zone formaition and Si/SiO2 interface behavior in MIS-structures under intrinsic gettering annealing. For the defect structure investigation the gamma-diffraction method was used side by side with some traditional methods.
Keywords
Annealing; Charge coupled devices; Density measurement; Energy measurement; Frequency measurement; Gettering; Impurities; Interface states; Silicon; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436419
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