DocumentCode :
1933961
Title :
Series resistance effects on EPROM programming
Author :
Bez, R. ; Cantarelli, D. ; Cappelletti, P. ; Maurelli, A. ; Ravazzi, L.
Author_Institution :
SGS-Thomson Microelectronics, 20041 Agrate MI, Italy
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
165
Lastpage :
168
Abstract :
An extensive characterization of the influence of series resistance on programming of 1.0¿m technology EPROM cells is presented. The different effects of series resistances on the source or on the drain have been pointed out. Furthermore a simple analytical model has been developed to simulate the influences on the programming.
Keywords :
Analytical models; Capacitance measurement; Current measurement; EPROM; Electrical resistance measurement; Functional programming; Length measurement; Threshold voltage; Time measurement; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436420
Link To Document :
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