Title :
New short-channel effects on nitrided oxide gate MOSFETs
Author :
Momose, H.S. ; Morimoto, Takuya ; Takagi, S. ; Yamabe, K. ; Onga, S. ; Iwai, H.
Author_Institution :
ULSI Research Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Abstract :
New short channel effects with nitride-oxide gate MOSFETs were found, where threshold voltage reduction occurs in a relatively long channel region. These effects would be explained by trapped charges or interface states induced by the mechanical stress at the Si and the nitride-oxide gate film in the course of the heat process.
Keywords :
Fabrication; Furnaces; MOSFET circuits; Nitrogen; Oxidation; Semiconductor films; Silicon; Substrates; Thermal stresses; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
