DocumentCode
1934047
Title
New short-channel effects on nitrided oxide gate MOSFETs
Author
Momose, H.S. ; Morimoto, Takuya ; Takagi, S. ; Yamabe, K. ; Onga, S. ; Iwai, H.
Author_Institution
ULSI Research Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
149
Lastpage
152
Abstract
New short channel effects with nitride-oxide gate MOSFETs were found, where threshold voltage reduction occurs in a relatively long channel region. These effects would be explained by trapped charges or interface states induced by the mechanical stress at the Si and the nitride-oxide gate film in the course of the heat process.
Keywords
Fabrication; Furnaces; MOSFET circuits; Nitrogen; Oxidation; Semiconductor films; Silicon; Substrates; Thermal stresses; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436424
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