Design of lower power 4×10Gb/s VCSEL driver array

Author

Xin Zhang ; Peng Miao ; Ling Tian ; Yingmei Chen ; Yong Tak Lee ; BongKyu Jeong

Author_Institution

Inst. of RF-& OE-ICs, Southeast Univ., Nanjing, China

fYear

2012

fDate

18-20 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

A 4-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver array is designed in a 0.18μm CMOS technology. Simulated results show that each channel works at 10Gb/s (12.5Gb/s max) under a supply voltage of 1.8 V. Thus, aggregated total capacity of 40 Gb/s can be obtained from 4 channels. The power dissipation of each channel is only 50mW. To decrease the fall time of the output waveform, C³A (Capacitively Coupled Current Amplifier) technique [1] is exploited. The VCSEL driver can be used in optical inter-connections between high speed chips.

Keywords

CMOS integrated circuits; surface emitting lasers; 4-channel vertical cavity surface emitting laser driver array; CMOS technology; byte rate 10 GByte/s; byte rate 40 GByte/s; capacitive coupled current amplifier technique; high speed chips; lower power VCSEL driver array design; optical interconnection; size 0.18 mum; voltage 1.8 V; Arrays; Bandwidth; CMOS integrated circuits; Integrated circuit interconnections; Resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Conference_Location

Nanjing

Print_ISBN

978-1-4673-0901-1

Electronic_ISBN

978-1-4673-0903-5

Type

conf

DOI

10.1109/IMWS2.2012.6338200

Filename

6338200