Title :
A charge and capacitance model for modern MOSFETs
Author :
Smedes, T. ; Klaassen, F.M.
Author_Institution :
Eindhoven University of Technology, Faculty of Electrical Engineering, Electron Devices Group, P.O.Box 513, 5600 MB Eindhoven, the Netherlands.
Abstract :
A new physical, compact charge and capacitance model for long to submicron size MOSFETs is presented. It includes the important short channel effects and the effets of parasitic elements present in modern MOSFETs. The model is compared with numerical device simulations and measurements on actual devices. Good agreement is found between modelling, simulation and measurement.
Keywords :
Circuit simulation; Degradation; Doping profiles; Electron devices; Laboratories; MOSFETs; Modems; Numerical simulation; Parasitic capacitance; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
