DocumentCode :
1934129
Title :
Microstructural and optical properties of LPCVD polysilicon films
Author :
Modreanu, M. ; Gartner, Mariuca ; Tomozeiu, N. ; Cobianu, C. ; Cosmin, P. ; Gavrila, Raluca
Author_Institution :
Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
387
Abstract :
Silicon thin films were deposited by low pressure chemical vapor deposition (LPCVD) on oxidized silicon substrates, from silane decomposition. The deposition temperatures used in our experiment have been 500, 530, 550, 590 and 615°C and the pressure values was 20, 53 and 100 Pa. The microstructure and the surface roughness of as deposited films were investigated by X-ray diffraction (XRD), spectroelipsometry (using the Bruggemann-Effective Medium Approximation with a multilayer model) and AFM techniques. Three different models, Tauc, Cody and Wemple-Di Domenico were used to estimate the values of the optical gap. The results show the influence of the microstructure on the physical and optical properties of as-deposited LPCVD silicon films. It is pointed out that polycrystalline silicon thin films can be obtained by LPCVD technique below 550°C
Keywords :
CVD coatings; X-ray diffraction; atomic force microscopy; elemental semiconductors; ellipsometry; optical constants; semiconductor growth; semiconductor thin films; silicon; 20 to 100 Pa; 500 to 615 C; AFM; Bruggemann effective medium approximation; Cody model; LPCVD polysilicon film; Si; Tauc model; Wemple-Di Domenico model; X-ray diffraction; low-pressure chemical vapor deposition; microstructure; multilayer model; optical gap; optical properties; oxidized silicon substrate; polycrystalline silicon thin film; silane decomposition; spectroellipsometry; surface roughness; Chemical vapor deposition; Microstructure; Optical films; Rough surfaces; Semiconductor thin films; Silicon; Sputtering; Surface roughness; Temperature; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967490
Filename :
967490
Link To Document :
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