Title :
Integration of Poly Buffered Locos and Gate Processing for Submicron Isolation Technique
Author :
Juenghng, W. ; Hillenius, S.J. ; Chen, M.L. ; Fritzinger, L.B.
Author_Institution :
AT&T Bell Laboratories, Allentown, PA
Keywords :
Buffer layers; Hafnium; MOS devices; Stress; Surface topography; Wet etching;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664728
