مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1934176

Title :

Progress and outlook for MRAM technology

Author :

Tehrani, S. ; Slaughter, I.M. ; Chen, E. ; Durlam, M. ; Shi, J. ; DeHerrera, M.

Author_Institution :

Motorola

fYear :

1999

fDate :

18-21 May 1999

Keywords :

Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetic switching; Magnetic tunneling; Nonvolatile memory; Perpendicular magnetic anisotropy; Random access memory; Spin valves; Switches;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Magnetics Conference, 1999. Digest of INTERMAG 99. 1999 IEEE International

Conference_Location :

Kyongju, Korea

Print_ISBN :

0-7803-5555-5

Type :

conf

DOI :

10.1109/INTMAG.1999.837837

Filename :

837837

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1934176