DocumentCode :
1934189
Title :
Effect of substrate origin and annealing conditions on stability of electrical conductivity of SnO2 thin polycrystalline films
Author :
Ivashchenko, Anatolii ; Kerner, Iacov ; Maronchuck, I.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
391
Abstract :
The variation of electrical conductivity in SnO2 thin films induced by their annealing in air or vacuum the temperature range from 380 to 750°C is considered. Substrate origin as well as ambient atmosphere of annealing plays principal role in stability of film properties
Keywords :
annealing; electrical conductivity; semiconductor materials; semiconductor thin films; substrates; thermal stability; tin compounds; 380 to 750 C; SnO2; SnO2 polycrystalline thin film; annealing; electrical conductivity; stability; substrate origin; Annealing; Atmosphere; Conductive films; Conductivity; Heat treatment; Semiconductor films; Stability; Substrates; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967491
Filename :
967491
Link To Document :
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