DocumentCode
1934261
Title
Optimization of P Implanted Silicon Bolometers
Author
Baciocco, E. ; Boragno, C. ; Valbusa, U. ; Bresolin, C. ; Pignatel, G.
Author_Institution
Dipartimento di Fisica, Via Dodecaneso 33, 16146 Genova, Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
245
Lastpage
248
Abstract
We have measured electrical resistance R as function of temperature T in the range 2 % 20 K of severaL P implanted Silicon bolonmeters with the aim of optimize the characteristics of the bolometers. We have investigated the R(T) behavior of several samples obtaitned by varying implant conditions, depth profile and annealing.
Keywords
Bolometers; Electric resistance; Electric variables measurement; Electrical resistance measurement; Extraterrestrial measurements; Physics; Silicon; Temperature dependence; Temperature distribution; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436433
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