Title :
Low voltage, high performance bandgap reference in standard CMOS technology
Author :
Zongmin, Wang ; Xiaofei, Zhu ; Lei, Chen ; Dawei, Zhang ; Tieliang, Zhang
Author_Institution :
Beijing Microelectron. Inst. of Technol., China
Abstract :
A high performance CMOS bandgap reference circuits using lateral bipolar transistors is presented. The bandgap reference circuit provides a very small dependence of the reference voltage on temperature. It aims at application in high-resolution temperature-stable analog-digital or digital-analog converters. The reference voltage has a simulated temperature coefficient of 8.3 ppm/°C over the temperature range of -40 to 125 °C at the typical model. The circuit is designed using a standard 0.35 μm CMOS technology. It can be operated under 1.8 V supply, while consuming 210 μW, the die area is 0.045 mm2.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; bipolar digital integrated circuits; bipolar transistors; digital-analogue conversion; reference circuits; -40 to 125 degC; 0.35 mum; 1.8 V; 210 muW; analog-digital converters; bandgap reference circuit; circuit design; digital-analog converters; high performance bandgap reference circuit; lateral bipolar transistors; standard CMOS technology; Analog-digital conversion; Bipolar transistors; CMOS technology; Circuit simulation; Digital-analog conversion; Low voltage; Photonic band gap; Semiconductor device modeling; Temperature dependence; Temperature distribution;
Conference_Titel :
VLSI Design and Video Technology, 2005. Proceedings of 2005 IEEE International Workshop on
Print_ISBN :
0-7803-9005-9
DOI :
10.1109/IWVDVT.2005.1504453
