Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Author

Yang, Xin ; Uchida, Yorikatsu ; Liu, Qing ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan

fYear

2012

fDate

18-20 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a low operation voltage ultra-wideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

Keywords

CMOS integrated circuits; MOSFET; field effect MIMIC; low-power electronics; TSMC CMOS technology; frequency 100 MHz to 40 GHz; low-power ultrawideband power detector IC; low-power ultrawideband power detector integrated circuit; microwave applications; millimeter-wave applications; nMOS transistor differential pair; power 0.116 mW; resistive feedback; size 130 nm; voltage 0.6 V to 1.2 V; CMOS integrated circuits; CMOS technology; Detectors; Logic gates; Power amplifiers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Conference_Location

Nanjing

Print_ISBN

978-1-4673-0901-1

Electronic_ISBN

978-1-4673-0903-5

Type

conf

DOI

10.1109/IMWS2.2012.6338206

Filename

6338206