Title :
An improved model of plasma etching including temperature dependence: comparison between simulation and experimental results
Author :
Gérodolle, A. ; Pelletier, J. ; Drouot, S
Author_Institution :
Centre National d´´Etudes des Télécommunications, BP 98, 38243 Meylan cedex, France
Abstract :
The temperature dependence of the plasma etching of silicon by SF6 has been studied. A purely reactive model involving a few parameters is presented. Parameter values are extracted from experimental data, and results of the simulations carried out with these parameters are compared with the experimental profiles.
Keywords :
Equations; Plasma applications; Plasma simulation; Plasma temperature; Silicon; Solid modeling; Sputter etching; Sputtering; Temperature dependence; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
