DocumentCode :
1934328
Title :
Low leakage current evaluations for process characterizations
Author :
Girard, P. ; Pistoulet, B. ; Nouet, P.
Author_Institution :
Laboratoire d´´Automatique et de Microelectronique de Montpellier (U.A. D03710 CNRS), Université de Montpellier II: Sciences et Techniques du Languedoc, Pl. E. Bataillon, 34095 MONTPELLIER Cedex 5, FRANCE
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
197
Lastpage :
200
Abstract :
In this paper the principle of operation of a structure allowing accurate determination of currents in the fA range is given. A device has been implemented on silicon and experimentally tested. The capability of 0.1 fA range measurements is demonstrated.
Keywords :
Area measurement; Capacitance measurement; Charge measurement; Current measurement; Energy measurement; Leakage current; Length measurement; MOSFETs; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436436
Link To Document :
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