Title :
On the limit between subthreshold and strong inversion regions in the EKV model using the nonlinear electrical conduction theorem
Author :
Dobrescu, L. ; Brezeanu, M. ; Rusu, A. ; Ionescu, A.M.
Author_Institution :
Politehnic Univ. of Bucharest, Romania
Abstract :
This paper presents a new approach to investigate the limit between the subthreshold and strong inversion regions in the EKV model based on the Nonlinear Electrical Conduction Theorem that involves calculations of the drain-current derivatives. The main advantage is the simultaneous extraction of the threshold voltage, VT and of the limit current, Is, between subthreshold and strong inversion regions. The proposed method is validated on ultra short channel MOSFET´s
Keywords :
MOSFET; semiconductor device models; EKV model; drain-current derivatives; limit current; nonlinear electrical conduction theorem; simultaneous extraction; strong inversion regions; subthreshold regions; threshold voltage; ultra short channel MOSFETs; Convergence; Electronic mail; Equations; Low voltage; MOSFETs; Paper technology; Parameter extraction; Robustness; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967498
