DocumentCode
1934418
Title
Static and dynamic characterization of MOS capacitors containing nano-crystal silicon dots
Author
Montès, Laurent ; Ferraton, Stèphane ; Ionica, Irina ; Mescot, Xavier ; Zimmermann, Jacques
Author_Institution
Lab. de Phys. des Composants a Semiconducteurs, UMRCNRS, Grenoble, France
Volume
2
fYear
2001
fDate
37165
Firstpage
425
Abstract
We present some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of non volatile single electron memories. This work is essential to stabilise the technology to be used in the future for these devices in very high density memory arrays
Keywords
MOS capacitors; capacitance; nanostructured materials; semiconductor device models; semiconductor device noise; semiconductor storage; silicon; LF noise; MOS capacitors; Si-SiO2; dynamic characterization; model; nano-crystal Si dots; nonvolatile single electron memories; static characterization; very high density memory arrays; Capacitance measurement; Current measurement; Electron traps; Frequency measurement; MOS capacitors; Silicon compounds; Single electron memory; Single electron transistors; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967499
Filename
967499
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