Title :
Static and dynamic characterization of MOS capacitors containing nano-crystal silicon dots
Author :
Montès, Laurent ; Ferraton, Stèphane ; Ionica, Irina ; Mescot, Xavier ; Zimmermann, Jacques
Author_Institution :
Lab. de Phys. des Composants a Semiconducteurs, UMRCNRS, Grenoble, France
Abstract :
We present some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of non volatile single electron memories. This work is essential to stabilise the technology to be used in the future for these devices in very high density memory arrays
Keywords :
MOS capacitors; capacitance; nanostructured materials; semiconductor device models; semiconductor device noise; semiconductor storage; silicon; LF noise; MOS capacitors; Si-SiO2; dynamic characterization; model; nano-crystal Si dots; nonvolatile single electron memories; static characterization; very high density memory arrays; Capacitance measurement; Current measurement; Electron traps; Frequency measurement; MOS capacitors; Silicon compounds; Single electron memory; Single electron transistors; US Department of Transportation; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967499
