DocumentCode
1934461
Title
A Comparative Study of Starting Materials for SOI Device Fabrication Obtained by Different Recrystallization Procedures and Material Structures
Author
Wouters, D.J. ; Tack, M.R. ; Mertens, P.W. ; Maes, H.E. ; Claeys, C.L.
Author_Institution
IMEC vzw, Kapeldreef 75, B-3030 Leuven, Belgium
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
299
Lastpage
302
Abstract
Different conditions of zone melting recrystallization using both laser and a mercury are lamp are studied. N-channel MOSFET´s were fabricated in these materials to compare their qualities and to evaluate their device-worthiness. Subgrainboundary-free silicon films are obtained resulting in devices with high surface mobility and low leakage currents.
Keywords
Argon; Lamps; Leakage current; Materials preparation; Optical device fabrication; Optical materials; Power lasers; Semiconductor films; Silicon; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436442
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