Title :
A Comparative Study of Starting Materials for SOI Device Fabrication Obtained by Different Recrystallization Procedures and Material Structures
Author :
Wouters, D.J. ; Tack, M.R. ; Mertens, P.W. ; Maes, H.E. ; Claeys, C.L.
Author_Institution :
IMEC vzw, Kapeldreef 75, B-3030 Leuven, Belgium
Abstract :
Different conditions of zone melting recrystallization using both laser and a mercury are lamp are studied. N-channel MOSFET´s were fabricated in these materials to compare their qualities and to evaluate their device-worthiness. Subgrainboundary-free silicon films are obtained resulting in devices with high surface mobility and low leakage currents.
Keywords :
Argon; Lamps; Leakage current; Materials preparation; Optical device fabrication; Optical materials; Power lasers; Semiconductor films; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
