Image force effect on forward characteristic of a rectifier metal-semiconductor contact

Author

Dobrescu, D. ; Rusu, A. ; Udrea, F. ; Dobrescu, Lidia

Author_Institution

Politehnic Inst. of Bucharest, Romania

Volume

2

fYear

2001

fDate

37165

Firstpage

429

Abstract

The image force effect is appreciated, especially, for the reverse regime of the rectifier metal-semiconductor contact, causing a weak dependence of the saturation current on the applied voltage. Applying this concept to the forward bias, at high values of currents, the ideality factor has an important increase. Combining this effect with the effect of the series resistance, which is important in the same range of currents, an important depreciation of the rectifier properties is observed

Keywords

electrical contacts; semiconductor device models; semiconductor diodes; semiconductor-metal boundaries; solid-state rectifiers; applied voltage; forward bias; forward characteristic; high current values; ideality factor; image force effect; physical model; rectifier diodes; rectifier metal-semiconductor contact; rectifier properties depreciation; saturation current; series resistance; Contacts; Electric resistance; Electric variables; Equations; Fabrication; Rectifiers; Semiconductor diodes; Tellurium; Thermal degradation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967500

Filename

967500