Title :
Image force effect on forward characteristic of a rectifier metal-semiconductor contact
Author :
Dobrescu, D. ; Rusu, A. ; Udrea, F. ; Dobrescu, Lidia
Author_Institution :
Politehnic Inst. of Bucharest, Romania
Abstract :
The image force effect is appreciated, especially, for the reverse regime of the rectifier metal-semiconductor contact, causing a weak dependence of the saturation current on the applied voltage. Applying this concept to the forward bias, at high values of currents, the ideality factor has an important increase. Combining this effect with the effect of the series resistance, which is important in the same range of currents, an important depreciation of the rectifier properties is observed
Keywords :
electrical contacts; semiconductor device models; semiconductor diodes; semiconductor-metal boundaries; solid-state rectifiers; applied voltage; forward bias; forward characteristic; high current values; ideality factor; image force effect; physical model; rectifier diodes; rectifier metal-semiconductor contact; rectifier properties depreciation; saturation current; series resistance; Contacts; Electric resistance; Electric variables; Equations; Fabrication; Rectifiers; Semiconductor diodes; Tellurium; Thermal degradation; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967500
