DocumentCode :
1934487
Title :
A flash EEPROM cell scaling including tunnel oxide limitations
Author :
Yoshikawa, Kuniyoshi ; Mori, Selichi ; Sakagami, Eiji ; Arai, Norihisa ; Kaneko, Yukio ; Ohshima, Yoichi
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Corp., 1, Komukai-Toshiba, Saiwai-ku, Kawasaki 210, JAPAN
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
169
Lastpage :
172
Abstract :
A new flash EEPROM cell scaling scenario is proposed, which takes tunnel oxide thinning limitation into consideration. The derived scaling scenario, performance, and reliability are discussed, in comparison with EPROM scaling.
Keywords :
Degradation; EPROM; Guidelines; Laboratories; Leakage current; Microelectronics; Reliability engineering; Semiconductor devices; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1934487
بازگشت