DocumentCode
1934525
Title
Simulation of Gate-Controlled Double-Injection SOI Structures Application to Micromgnetodiode Sensors
Author
Dimopoulos, G. ; Balestra, F. ; Chovet, A. ; Benachir, M. ; Brini, J.
Author_Institution
Alexander Onassis Foundation Scholar, Laboratoire de Physique des Composants A Semiconducteurs (UA-CNRS 840), Institut National Polytechnique de Grenoble, ENSERG, 23 Avenue des Martyrs, 38031 GRENOBLE Cedex, FRANCE
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
241
Lastpage
244
Abstract
Among the sensors able to be integrated with VLSI technologies, the gated micromagnetodiode is one of the most attractive magnetic sensors due to its simple design, small size and good sensitivity. Micromagnetodiodes have been fabricated on Silicon-On-Insulator technology. Experimental results concerning magnetic sensitivity, current-voltage characteristics and transconductance are compared to simple models which allow to understand more easily the physical behaviour of gated double-injection devices.
Keywords
Anodes; Current-voltage characteristics; Magnetic analysis; Magnetic devices; Magnetic films; Magnetic semiconductors; Magnetic sensors; Semiconductor films; Sensor phenomena and characterization; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436445
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