Simulation of Gate-Controlled Double-Injection SOI Structures Application to Micromgnetodiode Sensors

Among the sensors able to be integrated with VLSI technologies, the gated micromagnetodiode is one of the most attractive magnetic sensors due to its simple design, small size and good sensitivity. Micromagnetodiodes have been fabricated on Silicon-On-Insulator technology. Experimental results concerning magnetic sensitivity, current-voltage characteristics and transconductance are compared to simple models which allow to understand more easily the physical behaviour of gated double-injection devices.