Power devices for high voltage integrated circuits: new device and technology concepts

Author

Amaratunga, Gehan ; Udrea, Florin

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

2

fYear

2001

fDate

37165

Firstpage

441

Abstract

Power electronic devices and power integrated circuits will play a crucial role in increasing the efficiency with which electric power is consumed. This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed

Keywords

insulated gate bipolar transistors; isolation technology; power MOSFET; power integrated circuits; power semiconductor devices; silicon-on-insulator; HV SOI technology; HV power ICs; LDMOSFET; LIGBT; RESURF junction devices; SOCOS LDMOS; Si; dielectric isolation IGBT; high voltage devices; high voltage integrated circuits; industrial applications; isolation technology; lateral IGBT; partial SOI; power electronic devices; power integrated circuits; ultra-thin SOI devices; Consumer electronics; Home appliances; Insulated gate bipolar transistors; Integrated circuit technology; Motor drives; Power generation; Power integrated circuits; Power systems; Rectifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967503

Filename

967503