Title :
Dynamic hot-carrier stress on submicron n and p-channel transistors
Author :
Bergonzoni, C ; Libera, G Dalla ; Nannini, A
Author_Institution :
SGS-THOMSON Microelectronics - Central R & D, v. Olivetti 2 - 20041 Agrate Brianza (MI) - ITALY
Abstract :
MOSFET hot carrier degradation under dynamic stress conditions is analyzed on submicron N-and P-channel transistors manufactured with up to date CMOS processes. Comparison of dynamic data to static stressing results shows the inadequacy of conventional methods in life-time prediction. Novel effects, mainly for P-channel devices, are observed and discussed.
Keywords :
CMOS process; Circuit simulation; Degradation; Hot carriers; MOSFET circuits; Manufacturing processes; Microelectronics; Research and development; Stress; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
