Title :
An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs
Author :
Stanchina, W.E. ; Jensen, J.F. ; Walden, R.H. ; Hafizi, M. ; Sun, H.-C. ; Liu, T. ; Raghavan, C. ; Elliott, K.E. ; Kardos, M. ; Schmitz, A.E. ; Brown, Y.K. ; Montes, M.E. ; Yung, M.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabrication capability which is quite versatile in being able to produce digital, analog, mixed signal, and optoelectronic ICs within the same process. This enables the fab line to quickly respond to varying demands. Three ICs are discussed which exemplify the capability of this fab: (1) a 7 GHz 12-bit accumulator; (2) a nearly ideal continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator operating at a 3.2 GHz sample rate; and (3) a monolithic 4-channel optoelectronic receiver array capable of 20 Gb/s operation.
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; integrated optoelectronics; mixed analogue-digital integrated circuits; 12 bit; 20 Gbit/s; 3.2 GHz; 7 GHz; InP; accumulator; analog ICs; continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator; digital ICs; heterojunction bipolar transistor; high-speed ICs; indium phosphide; integrated circuit fabrication; mixed-signal ICs; monolithic four-channel optoelectronic receiver array; optoelectronic ICs; Analog integrated circuits; Bandwidth; Bipolar integrated circuits; Delta modulation; Digital integrated circuits; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Optical device fabrication; Signal processing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528954
