Title :
GaAs FET and HFET on InP substrate
Author :
Clei, A. ; Azoulay, R. ; Draida, N. ; Biblemont, S. ; Joly, C.
Author_Institution :
CENTRE NATIONAL D´´ETUDES DES TELECOMMUNICATIONS, LABORATOIRE DE BAGNEUX, 196 RUE HENRY RAVERA 92220 BAGNEUX (FRANCE). TELEX: CNET BAGNEUX 202 266 F FAX: (1) 45295405
Abstract :
GaAs FET and HFET structures have been grown by mismatched MOVPE epitaxy on InP substrates and processed using conventionnal technology. These transistors exhibit characteristics comparable to those measured on GaAs substrate. Ft and Fmax values of 12 and 30 GHz are measured on 1¿m MESFET. Intrinsic transconductance greater than 250 mS/mm have been extracted for 1¿m gatelength DMT.
Keywords :
Epitaxial growth; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium phosphide; MESFETs; MODFETs; Substrates; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
