• DocumentCode
    1934632
  • Title

    GaAs FET and HFET on InP substrate

  • Author

    Clei, A. ; Azoulay, R. ; Draida, N. ; Biblemont, S. ; Joly, C.

  • Author_Institution
    CENTRE NATIONAL D´´ETUDES DES TELECOMMUNICATIONS, LABORATOIRE DE BAGNEUX, 196 RUE HENRY RAVERA 92220 BAGNEUX (FRANCE). TELEX: CNET BAGNEUX 202 266 F FAX: (1) 45295405
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    GaAs FET and HFET structures have been grown by mismatched MOVPE epitaxy on InP substrates and processed using conventionnal technology. These transistors exhibit characteristics comparable to those measured on GaAs substrate. Ft and Fmax values of 12 and 30 GHz are measured on 1¿m MESFET. Intrinsic transconductance greater than 250 mS/mm have been extracted for 1¿m gatelength DMT.
  • Keywords
    Epitaxial growth; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium phosphide; MESFETs; MODFETs; Substrates; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934632