Title :
A study of the CoolMOS integral diode: analysis and optimisation
Author :
Ng, R. ; Udrea, F. ; Sheng, K. ; Amaratunga, G.A.J.
Abstract :
This paper examines the internal carrier dynamics during reverse recovery of the integral diode present in the CoolMOS FET. The physical processes occurring within the device allows identification of the factors influencing the recovery/transient characteristics of the integral diode. It is also observed that a trade-off exists between the specific on-resistance and the softness of the diode
Keywords :
power MOSFET; power semiconductor diodes; CoolMOS FET; carrier dynamics; design optimisation; integral diode; reverse recovery; softness factor; specific on-resistance; transient characteristics; Bridge circuits; Charge carrier lifetime; Circuit simulation; Diodes; FETs; MOSFETs; Medical simulation; Motor drives; Pulse width modulation; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967505
