Title :
Surge suppressor made of silicon: electric characteristics, transient response and modeling
Author :
Mendez, J. ; Aceves, M. ; Pedraza, J. ; Malik, A.
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
In this work a new device made of silicon rich oxide and silicon and its application as surge suppressor is presented. We present experimental results of these devices that were obtained applying voltage peaks according with IEEE standards. Also a circuital model for computer simulation of the Al/SRO/Si surge suppressor device is proposed. We compare the experimental results and computer simulations using this model in Pspice. The circuital model shows that really describes the behavior of Al/SRO/Si device
Keywords :
MIS devices; SPICE; aluminium; elemental semiconductors; equivalent circuits; power semiconductor devices; semiconductor device models; silicon; silicon compounds; surge protection; transient response; Al/SRO/Si surge suppressor device; PSPICE model; Si-SiO-Al; circuit model; computer simulation; electrical characteristics; silicon rich oxide; transient response; voltage peak; Application software; Circuits; Clamps; Computer simulation; Electric variables; Gases; Silicon; Surges; Transient response; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967507
