• DocumentCode
    1934739
  • Title

    A system to measure reverse recovery time and stored charge at ultrafast power diodes

  • Author

    Draghici, Florin ; Jorda, Xavier ; Brezeanu, Gheorghe ; Badila, Marian ; Millan, Jose ; Godignon, Philippe

  • Author_Institution
    Politehnica Univ. of Bucharest, Romania
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    473
  • Abstract
    This paper presents a reverse recovery time (trr) and stored charge (Qrr) measurement circuit for ultrafast Si and SiC power diodes. The circuit developed according to the JESD24-10 standard specification allows one to obtain 0.1-5 A forward current, 10-100 V reverse voltage and 50-500 A/μs di/dt
  • Keywords
    charge measurement; elemental semiconductors; power semiconductor diodes; semiconductor device measurement; semiconductor device testing; silicon; silicon compounds; test equipment; time measurement; wide band gap semiconductors; 0.1 to 5 A; 10 to 100 V; JESD24-10 standard specification; Si; Si power diodes; SiC; SiC power diodes; fast switching devices; reverse recovery test circuit; reverse recovery time measurement; stored charge measurement; ultrafast power diodes; Charge measurement; Circuits; Current measurement; Diodes; Power measurement; Q measurement; Silicon carbide; Standards development; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967508
  • Filename
    967508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934739