DocumentCode :
1934744
Title :
Characterization of Back-Channel Subthreshold Conduction of Walled Soi Devices
Author :
Chen, H. ; Yue, J. ; Dougal, G.
Author_Institution :
Honeywell SSEC, Plymouth, MN
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Annealing; Degradation; Electrons; Hot carriers; Leak detection; Leakage current; MOS devices; Parasitic capacitance; Road transportation; Subthreshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664730
Filename :
664730
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1934744
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