• DocumentCode
    1934749
  • Title

    Optimizing the double diffusion process for power diodes manufacturing

  • Author

    Galateanu, L. ; Bazu, M. ; Tibeica, C. ; Popa, Emil ; Nichita, Anca ; Turtudau, F.

  • Author_Institution
    Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    477
  • Abstract
    An optimization of the double diffusion process performed with B-Al and P paint-on sources is presented. An increase of the yield by 25-35% for the fabrication of the power rectifier diodes having VBR⩾1200V is obtained. The work was carried out within the frame of CALIST National Program
  • Keywords
    diffusion; elemental semiconductors; power semiconductor diodes; scanning electron microscopy; semiconductor device manufacture; silicon; solid-state rectifiers; SEM; Si; double diffusion process; manufacturing yield; optimization; paint-on sources; power rectifier diodes; Breakdown voltage; Degradation; Diffusion processes; Diodes; Fabrication; Manufacturing processes; Rectifiers; Scanning electron microscopy; Semiconductor device measurement; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967509
  • Filename
    967509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1934749