DocumentCode :
1934749
Title :
Optimizing the double diffusion process for power diodes manufacturing
Author :
Galateanu, L. ; Bazu, M. ; Tibeica, C. ; Popa, Emil ; Nichita, Anca ; Turtudau, F.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
477
Abstract :
An optimization of the double diffusion process performed with B-Al and P paint-on sources is presented. An increase of the yield by 25-35% for the fabrication of the power rectifier diodes having VBR⩾1200V is obtained. The work was carried out within the frame of CALIST National Program
Keywords :
diffusion; elemental semiconductors; power semiconductor diodes; scanning electron microscopy; semiconductor device manufacture; silicon; solid-state rectifiers; SEM; Si; double diffusion process; manufacturing yield; optimization; paint-on sources; power rectifier diodes; Breakdown voltage; Degradation; Diffusion processes; Diodes; Fabrication; Manufacturing processes; Rectifiers; Scanning electron microscopy; Semiconductor device measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967509
Filename :
967509
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1934749
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