Title :
A two-dimensional approach to the noise simulation of GaAs MESFETs
Author :
Ghione, Giovanni
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, Italy
Abstract :
A two-dimensional technique for the physical noise majority-carrier modeling of GaAs MESFETs is presented, based upon a computationally efficient 2D implementation of the impedance-field method. Preliminary results concerning an epitaxial device on a semi-insulating substrate are discussed.
Keywords :
Boundary conditions; Current density; Electrodes; Electron microscopy; Fluctuations; Gallium arsenide; Green´s function methods; Impedance; MESFETs; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
