DocumentCode :
1934800
Title :
Silicon diode electrical characteristics under electron-beam irradiation conditions - experiments and theoretical interpretation
Author :
Codreanu, Catalin ; Iliescu, Elena ; Obreja, V.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
481
Abstract :
The results of an experimental study on the effects of the electron-beam irradiation on electrical characteristics of silicon diodes having different technological profiles are presented. Experimental results are correlated with theoretical approaches to conclude on efficiency of using the irradiation method to decrease lifetimes in different types of diodes
Keywords :
carrier lifetime; electron beam effects; elemental semiconductors; power semiconductor diodes; silicon; Si; carrier lifetime; electron-beam irradiation; forward characteristics; power semiconductor diodes; reverse characteristics; Anodes; Boron; Cathodes; Charge carrier lifetime; Electric variables; Protection; Rubber; Semiconductor diodes; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967510
Filename :
967510
Link To Document :
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