DocumentCode
1934800
Title
Silicon diode electrical characteristics under electron-beam irradiation conditions - experiments and theoretical interpretation
Author
Codreanu, Catalin ; Iliescu, Elena ; Obreja, V.
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Volume
2
fYear
2001
fDate
37165
Firstpage
481
Abstract
The results of an experimental study on the effects of the electron-beam irradiation on electrical characteristics of silicon diodes having different technological profiles are presented. Experimental results are correlated with theoretical approaches to conclude on efficiency of using the irradiation method to decrease lifetimes in different types of diodes
Keywords
carrier lifetime; electron beam effects; elemental semiconductors; power semiconductor diodes; silicon; Si; carrier lifetime; electron-beam irradiation; forward characteristics; power semiconductor diodes; reverse characteristics; Anodes; Boron; Cathodes; Charge carrier lifetime; Electric variables; Protection; Rubber; Semiconductor diodes; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967510
Filename
967510
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