Boron redistribution in pre-amorphized Si during thermal annealing

Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×10 ²⁰ cm ^-3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high temperature anneals.