Title :
Investigation on operation of silicon power devices in the breakdown region of electrical characteristic
Author :
Obreja, Vasile V N
Author_Institution :
Nat. R&D Inst. for Microtechnology, Bucharest, Romania
Abstract :
The surface component of reverse current is a serious cause of limitation for the operation at high junction temperature of present-day available silicon high voltage devices, in the breakdown region of their electrical I-V characteristic. Improved device performance can be achieved by minimizing this component through advanced junction passivation techniques
Keywords :
elemental semiconductors; passivation; power semiconductor diodes; semiconductor device breakdown; silicon; I-V characteristics; Si; breakdown region; high voltage devices; junction surface effects; passivation; power dissipation; reverse current; Breakdown voltage; Diodes; Electric breakdown; Electric variables; Manufacturing; Passivation; Power dissipation; Research and development; Silicon; Temperature;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967511
