Simulations of radical and ion transport in inductively coupled plasma etching reactors

Summary form only given. Inductively coupled plasma (ICP) sources are being investigated for use in etching of semiconductors and deposition of polymers. A 2-D hybrid model has been developed to investigate these ICP reactors. The simulation consists of coupled electromagnetic, Monte Carlo, and fluid modules. The electromagnetic module solves for the antenna-generated azimuthal electric field in the plasma. The Monte Carlo simulation produces source functions for electron impact processing using both these fields and time-varying electrostatic fields obtained from the fluid module. The fluid module solves the continuity equations for charged and neutral species, and Poisson´s equation while including RF biasing of the substrate. Results for densities and fluxes of ions and radicals to the substrate have been obtained for electropositive (e.g., Ar, He) and electronegative (He/CF/sub 4/, O/sub 2/, Ar/O/sub 2CF/sub 4/) gas mixtures.