DocumentCode
1934931
Title
FIB and DRIE combination for nanotip fabrication
Author
Villanueva, G. ; Plaza, J.A. ; Sánchez-Amores, A. ; Bausells, J. ; Martínez, E. ; Samitier, J. ; Errachid, A.
Author_Institution
Centro Nacional de Microelectron., Bellaterra, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
443
Lastpage
446
Abstract
The authors have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called "rocket tips" which could be fabricated with a high aspect ratio. The rocket tips were further processed by using a focused ion beam to obtain nanotips at their apex. Typical results obtained were nanotips with a basis radius of 200 nm and a height of 2.5 μm, with an apex radius of 5 nm, located on top of a 3 μm wide and 9 μm high silicon column. The process would allow however obtaining column heights of several tens of microns.
Keywords
atomic force microscopy; micromachining; nanotechnology; probes; sputter etching; 2.5 micron; 200 nm; 3 micron; 5 nm; 9 micron; DRIE; FIB; deep reactive ion etching; focused ion beam; nanotip fabrication; rocket tips; Anisotropic magnetoresistance; Atomic force microscopy; Fabrication; Ion beams; Laboratories; Probes; Rockets; Shafts; Silicon compounds; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Conference_Location
Tarragona
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504477
Filename
1504477
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