Design of a 10 Gb/s Laser Diode Voltage Driver in 0.18 um CMOS technology

Author

Dawei, Zai ; Yingmei, Chen ; Ling, Tian ; Li, Zhang

Author_Institution

Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China

fYear

2012

fDate

18-20 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

This paper describes the design of a 10 Gb/s Laser Diode Voltage Driver (LDVD) circuit using 0.18 um CMOS technology. The LDVD circuit consists of input buffer stage, preamplifier stage and output driver stage. The LDVD uses dual power supplies, including the 1.8 V supply in the pre-amplifier stage and the 3.5 V supply in the output driver stage. In order to increase the bandwidth, the pre-amplifier stage is made up of two-stage cascaded differential amplifiers. The output driver circuit uses the C³A structure to speed up the turnoff of laser diode. Post simulation results show that the Laser Diode Voltage Driver can work at 12.5 Gb/s rate and the output current swing is over 10 mA. The power dissipation is 142mW and the chip area is 440 um × 470 um.

Keywords

CMOS integrated circuits; driver circuits; integrated optoelectronics; power supply circuits; semiconductor lasers; C³A structure; CMOS technology; LDVD circuit; bit rate 10 Gbit/s; bit rate 12.5 Gbit/s; current 10 mA; dual power supply; input buffer stage; laser diode voltage driver design; output driver stage; power 142 mW; preamplifier stage; size 0.18 mum; two-stage cascaded differential amplifiers; voltage 1.8 V; voltage 3.5 V; Bandwidth; CMOS integrated circuits; CMOS technology; Diode lasers; Layout; Vehicles; Vertical cavity surface emitting lasers; C³A; CMOS; Laser Diode Voltage Driver; dual power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Conference_Location

Nanjing

Print_ISBN

978-1-4673-0901-1

Electronic_ISBN

978-1-4673-0903-5

Type

conf

DOI

10.1109/IMWS2.2012.6338231

Filename

6338231