Title :
Design of a 10 Gb/s Laser Diode Voltage Driver in 0.18 um CMOS technology
Author :
Dawei, Zai ; Yingmei, Chen ; Ling, Tian ; Li, Zhang
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
This paper describes the design of a 10 Gb/s Laser Diode Voltage Driver (LDVD) circuit using 0.18 um CMOS technology. The LDVD circuit consists of input buffer stage, preamplifier stage and output driver stage. The LDVD uses dual power supplies, including the 1.8 V supply in the pre-amplifier stage and the 3.5 V supply in the output driver stage. In order to increase the bandwidth, the pre-amplifier stage is made up of two-stage cascaded differential amplifiers. The output driver circuit uses the C3A structure to speed up the turnoff of laser diode. Post simulation results show that the Laser Diode Voltage Driver can work at 12.5 Gb/s rate and the output current swing is over 10 mA. The power dissipation is 142mW and the chip area is 440 um × 470 um.
Keywords :
CMOS integrated circuits; driver circuits; integrated optoelectronics; power supply circuits; semiconductor lasers; C3A structure; CMOS technology; LDVD circuit; bit rate 10 Gbit/s; bit rate 12.5 Gbit/s; current 10 mA; dual power supply; input buffer stage; laser diode voltage driver design; output driver stage; power 142 mW; preamplifier stage; size 0.18 mum; two-stage cascaded differential amplifiers; voltage 1.8 V; voltage 3.5 V; Bandwidth; CMOS integrated circuits; CMOS technology; Diode lasers; Layout; Vehicles; Vertical cavity surface emitting lasers; C3A; CMOS; Laser Diode Voltage Driver; dual power supplies;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338231
